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题名:
Fabrication of nanoimprint stamp using interference lithography
作者: Chen Xian-Zhong; Li Hai-Ying
刊名: CHINESE PHYSICS LETTERS
出版日期: 2007-10-01
卷号: 24, 期号:10, 页码:2830-2832
文章类型: Article
英文摘要: Interference lithography is used to fabricate a nanoimprint stamp, which is a key step for nanoimprint lithography. A layer of chromium in thickness of about 20 nm is deposited on the newly cleaned fused silica substrate by thermal evaporation, and a layer of positive resist in thickness of 150 nm is spun on the chromium layer. Some patterns, including lines, holes and pillars, are observed on the photoresist Elm by exposing the resist to interference patterns and they are then transferred to the chromium layer by wet etching. Fused silica stamps are fabricated by reactive ion etching with CHF3/O-2 as etchants using the chromium layer as etch mask. An atomic force microscope is used to analyse the pattern transfer in each step. The results show that regular hole patterns of fused silica, with average full width 143 nm at half maximum (FWHM), average hole depth of 76 nm and spacing of 450 nm, have been fabricated. The exposure method is fast, inexpensive and applicable for fabrication of nanoimprint stamps with large areas.
WOS标题词: Science & Technology ; Physical Sciences
类目[WOS]: Physics, Multidisciplinary
研究领域[WOS]: Physics
关键词[WOS]: OPTICAL-PROPERTIES
收录类别: SCI
语种: 英语
WOS记录号: WOS:000249810900032
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.ioe.ac.cn/handle/181551/3581
Appears in Collections:光电技术研究所被WoS收录文章_期刊论文

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作者单位: Chinese Acad Sci, Inst Opt & Elect, State Key Lab Opt Technol Microfabricat, Chengdu 610209, Peoples R China

Recommended Citation:
Chen Xian-Zhong,Li Hai-Ying. Fabrication of nanoimprint stamp using interference lithography[J]. CHINESE PHYSICS LETTERS,2007,24(10):2830-2832.
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