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题名:
Electronic transport characterization of silicon wafers by laterally resolved free-carrier absorption and multiparameter fitting
作者: Zhang, Xiren; Li, Bincheng; Gao, Chunming
刊名: APPLIED PHYSICS LETTERS
出版日期: 2006-09-11
卷号: 89, 期号:11
文章类型: Article
英文摘要: Laterally resolved modulated free-carrier absorption (MFCA) is applied to the simultaneous determination of the electronic transport properties of semiconductor wafers. A rigorous three-dimensional carrier diffusion model is used to fit the observed dependences of the MFCA signal amplitude and phase on the separation between the pump and probe laser spots, measured at several modulation frequencies covering an appropriate range. This leads to a simultaneous and unambiguous determination of the values of three transport parameters, namely, the minority-carrier lifetime tau, the carrier diffusivity D, and the front surface recombination velocity s(1). The extracted values for a n-type Si wafer with a resistivity of 7-10 Omega cm are 53 mu s (tau), 16.6 cm(2)/s (D), and < 200 cm/s (s(1)), respectively. (c) 2006 American Institute of Physics.
WOS标题词: Science & Technology ; Physical Sciences
类目[WOS]: Physics, Applied
研究领域[WOS]: Physics
关键词[WOS]: SURFACE RECOMBINATION VELOCITY ; PHOTOTHERMAL MICROSCOPY ; BULK LIFETIME ; RADIOMETRY ; SUBSTRATE
收录类别: SCI
语种: 英语
WOS记录号: WOS:000240545400069
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.ioe.ac.cn/handle/181551/3539
Appears in Collections:光电技术研究所被WoS收录文章_期刊论文

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作者单位: Chinese Acad Sci, Inst Opt & Elect, Chengdu 610209, Sichuan, Peoples R China

Recommended Citation:
Zhang, Xiren,Li, Bincheng,Gao, Chunming. Electronic transport characterization of silicon wafers by laterally resolved free-carrier absorption and multiparameter fitting[J]. APPLIED PHYSICS LETTERS,2006,89(11).
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