(Pb,La)(Zr,Ti)O-3 (PLZT) thin films were grown on Pt/Ti/SiO2/Si and fused quartz substrates by radio-frequency magnetron sputtering at 650 degrees C. X-ray diffraction analysis shows that the PLZT films are polycrystalline with (100)-preferential orientation. The Al/PLZT/Pt capacitors have been fabricated and show good ferroelectric properties with the remanent polarization of 24.3 mu C/cm(2) and coercive field of 142 kV/cm. The leakage current density is only about 0.86x10(-7) A/cm(2) at 200 kV/cm. The energy gap E-g of the films is estimated to be about 3.54 eV by optical transmittance measurements. Their fundamental optical constants are obtained by a Filmetrics F20 reflectance spectrometer (F20). These results show that the PLZT ferroelectric thin films are promising materials for optoelectronic devices. (c) 2006 American Institute of Physics.
1.Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China 2.Chinese Acad Sci, Inst Opt & Elect, Chengdu 610209, Peoples R China
Leng, W. J.,Yang, C. R.,Ji, H.,et al. Electrical and optical properties of lanthanum-modified lead zirconate titanate thin films by radio-frequency magnetron sputtering[J]. JOURNAL OF APPLIED PHYSICS,2006,100(10).