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IOE OpenIR  > 光电技术研究所被WoS收录文章  > 期刊论文
题名:
High electric-field-induced strain of Pb(Mg1//3Nb2/3)O-3-PbTiO3 crystals and their application in multilayer actuators
作者: Feng, Z; Luo, H; Yin, Z; Guang, C; Ling, N
刊名: APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
出版日期: 2005-11-01
卷号: 81, 期号:6, 页码:1245-1248
文章类型: Article
英文摘要: Electric-field-induced strain behavior of differently oriented and componential (1-x)Pb(Mg1/3Nb2/3)O(3)xPbTiO(3) (PMNT) crystals was investigated. An optimum composition range (29 <= x <= 31%) of < 001 >-oriented PMNT crystals was ascertained for multilayer actuator applications, which exhibited high-strain and low-hysteresis behavior. The rhombohedral (monoclinic)-tetragonal phase-transition behavior in PMNT single crystals is dependent on their thermal and electric history, which markedly impacts on the strain performance of the crystals. In contrast to PZT-SF (doped PZT ceramics) multilayer actuators, the strain values for 20-layer PMNT actuators with individual element sizes of 6x6x0.3 mm(3) are larger by more than five times at 20 kV/cm (0.373% compared to 0.072%), and 23-mu m displacements can been achieved. Against 40-N load, the displacements are decreased to 20.2 mu m.
WOS标题词: Science & Technology ; Technology ; Physical Sciences
类目[WOS]: Materials Science, Multidisciplinary ; Physics, Applied
研究领域[WOS]: Materials Science ; Physics
关键词[WOS]: MORPHOTROPIC PHASE-BOUNDARY ; SINGLE-CRYSTALS ; POLARIZATION ROTATION ; PBTIO3
收录类别: SCI
语种: 英语
WOS记录号: WOS:000231599900027
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.ioe.ac.cn/handle/181551/3523
Appears in Collections:光电技术研究所被WoS收录文章_期刊论文

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作者单位: 1.Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 201800, Peoples R China
2.Chinese Acad Sci, Inst Opt & Elect, Chengdu 610209, Peoples R China

Recommended Citation:
Feng, Z,Luo, H,Yin, Z,et al. High electric-field-induced strain of Pb(Mg1//3Nb2/3)O-3-PbTiO3 crystals and their application in multilayer actuators[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,2005,81(6):1245-1248.
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