IOE OpenIR  > 光电技术研究所被WoS收录文章
Measurement accuracy analysis of photocarrier radiometric determination of electronic transport parameters of silicon wafers
Li, BC; Shaughnessy, D; Mandelis, A
Source PublicationJOURNAL OF APPLIED PHYSICS
Volume97Issue:2
2005-01-15
Language英语
Indexed BySCI
WOS IDWOS:000226700500048
SubtypeArticle
AbstractSimulations are performed to investigate the accuracy of the simultaneous determination of the electronic transport properties (the carrier lifetime, the carrier diffusion coefficient, and the front and rear surface recombination velocities) of silicon wafers by means of the photocarrier radiometry (PCR) technique through fitting frequency-scan data to a rigorous model via a multi-parameter fitting process. The uncertainties of the fitted parameter values are analyzed by calculating the dependence of the square variance including both amplitude and phase variances on the electronic transport properties. Simulation results show that the ability of the PCR to accurately determine carrier lifetimes gradually decreases for lifetimes longer than roughly 100 microseconds. In case the carrier diffusion coefficient is previously known, the carrier lifetime and front surface recombination velocity can be determined with uncertainties approximately +/-20% or less. Experiments with an ion-implanted silicon wafer were performed and the carrier lifetime and front surface recombination velocity were determined with estimated uncertainties approximately +/-30% and +/-15%, respectively. (C) 2005 American Institute of Physics.
WOS KeywordINFRARED PHOTOTHERMAL RADIOMETRY ; SURFACE RECOMBINATION VELOCITY ; FREE-CARRIER ABSORPTION ; SI WAFERS ; BULK LIFETIME ; COMPUTATIONAL ASPECTS ; PHOTOCONDUCTANCE ; SEMICONDUCTORS ; WAVE ; SEPARATION
WOS Research AreaPhysics
WOS SubjectPhysics, Applied
Citation statistics
Document Type期刊论文
Identifierhttp://ir.ioe.ac.cn/handle/181551/3513
Collection光电技术研究所被WoS收录文章
Affiliation1.Univ Toronto, Dept Mech & Ind Engn, Ctr Adv Diffus Wave Technol, Toronto, ON M5S 3G8, Canada
2.Chinese Acad Sci, Inst Opt & Elect, Chengdu 610209, Peoples R China
Recommended Citation
GB/T 7714
Li, BC,Shaughnessy, D,Mandelis, A. Measurement accuracy analysis of photocarrier radiometric determination of electronic transport parameters of silicon wafers[J]. JOURNAL OF APPLIED PHYSICS,2005,97(2).
APA Li, BC,Shaughnessy, D,&Mandelis, A.(2005).Measurement accuracy analysis of photocarrier radiometric determination of electronic transport parameters of silicon wafers.JOURNAL OF APPLIED PHYSICS,97(2).
MLA Li, BC,et al."Measurement accuracy analysis of photocarrier radiometric determination of electronic transport parameters of silicon wafers".JOURNAL OF APPLIED PHYSICS 97.2(2005).
Files in This Item:
There are no files associated with this item.
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Li, BC]'s Articles
[Shaughnessy, D]'s Articles
[Mandelis, A]'s Articles
Baidu academic
Similar articles in Baidu academic
[Li, BC]'s Articles
[Shaughnessy, D]'s Articles
[Mandelis, A]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Li, BC]'s Articles
[Shaughnessy, D]'s Articles
[Mandelis, A]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.