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题名:
Measurement accuracy analysis of photocarrier radiometric determination of electronic transport parameters of silicon wafers
作者: Li, BC; Shaughnessy, D; Mandelis, A
刊名: JOURNAL OF APPLIED PHYSICS
出版日期: 2005-01-15
卷号: 97, 期号:2
文章类型: Article
英文摘要: Simulations are performed to investigate the accuracy of the simultaneous determination of the electronic transport properties (the carrier lifetime, the carrier diffusion coefficient, and the front and rear surface recombination velocities) of silicon wafers by means of the photocarrier radiometry (PCR) technique through fitting frequency-scan data to a rigorous model via a multi-parameter fitting process. The uncertainties of the fitted parameter values are analyzed by calculating the dependence of the square variance including both amplitude and phase variances on the electronic transport properties. Simulation results show that the ability of the PCR to accurately determine carrier lifetimes gradually decreases for lifetimes longer than roughly 100 microseconds. In case the carrier diffusion coefficient is previously known, the carrier lifetime and front surface recombination velocity can be determined with uncertainties approximately +/-20% or less. Experiments with an ion-implanted silicon wafer were performed and the carrier lifetime and front surface recombination velocity were determined with estimated uncertainties approximately +/-30% and +/-15%, respectively. (C) 2005 American Institute of Physics.
WOS标题词: Science & Technology ; Physical Sciences
类目[WOS]: Physics, Applied
研究领域[WOS]: Physics
关键词[WOS]: INFRARED PHOTOTHERMAL RADIOMETRY ; SURFACE RECOMBINATION VELOCITY ; FREE-CARRIER ABSORPTION ; SI WAFERS ; BULK LIFETIME ; COMPUTATIONAL ASPECTS ; PHOTOCONDUCTANCE ; SEMICONDUCTORS ; WAVE ; SEPARATION
收录类别: SCI
语种: 英语
WOS记录号: WOS:000226700500048
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.ioe.ac.cn/handle/181551/3513
Appears in Collections:光电技术研究所被WoS收录文章_期刊论文

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作者单位: 1.Univ Toronto, Dept Mech & Ind Engn, Ctr Adv Diffus Wave Technol, Toronto, ON M5S 3G8, Canada
2.Chinese Acad Sci, Inst Opt & Elect, Chengdu 610209, Peoples R China

Recommended Citation:
Li, BC,Shaughnessy, D,Mandelis, A. Measurement accuracy analysis of photocarrier radiometric determination of electronic transport parameters of silicon wafers[J]. JOURNAL OF APPLIED PHYSICS,2005,97(2).
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