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题名:
Influence of vignetting on signal analysis of photocarrier radiometry of semiconductor wafers
作者: Li, BC; Shaughnessy, D; Mandelis, A
刊名: REVIEW OF SCIENTIFIC INSTRUMENTS
出版日期: 2005-06-01
卷号: 76, 期号:6
文章类型: Article
英文摘要: The influence of vignetting on the photocarrier radiometry (PCR) measurements of semiconductor wafers has been investigated both theoretically and experimentally by analyzing the vignetting effect on the PCR amplitude and on the frequency dependence of the PCR amplitude and phase. The vignetting effect significantly reduces the PCR amplitude and modifies the frequency dependencies that are widely used to extract simultaneously the electronic transport properties (that is, the carrier lifetime, the carrier diffusion coefficient, and the front and rear surface recombination velocities) of semiconductor wafers. When using the frequency dependence of the PCR signal to determine the transport properties, the effect of vignetting can be accounted for by an "effective detector size"-a reduced detector size determined by the actual detector size and the vignetting effect. (c) 2005 American Institute of Physics.
WOS标题词: Science & Technology ; Technology ; Physical Sciences
类目[WOS]: Instruments & Instrumentation ; Physics, Applied
研究领域[WOS]: Instruments & Instrumentation ; Physics
关键词[WOS]: INFRARED PHOTOTHERMAL MICROSCOPY ; SILICON-WAFERS ; SI WAFERS ; TRANSPORT-PROPERTIES ; CARRIER-LIFETIME ; DEPENDENCE ; DIFFRACTION
收录类别: SCI
语种: 英语
WOS记录号: WOS:000229962000058
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.ioe.ac.cn/handle/181551/3512
Appears in Collections:光电技术研究所被WoS收录文章_期刊论文

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作者单位: 1.Chinese Acad Sci, Inst Opt & Elect, Chengdu 610209, Peoples R China
2.Univ Toronto, CADIFT, Dept Mech & Ind Engn, Toronto, ON M5S 3G8, Canada

Recommended Citation:
Li, BC,Shaughnessy, D,Mandelis, A. Influence of vignetting on signal analysis of photocarrier radiometry of semiconductor wafers[J]. REVIEW OF SCIENTIFIC INSTRUMENTS,2005,76(6).
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