In this paper, a new hybrid method to fabricate submicron photon sieve is proposed, where the E-beam lithography and the X-ray lithography are used. It is found that 2.81 mu m thickness of the polyimide film, 400 nm thickness of the ZEP-520 and 280 mu C/cm(2) exposure dose are good for E-beam lithography, while 500 nm thickness of the PMMA and 30 s developing time are good for X-ray lithography. We have successfully fabricated the photon sieve with these parameters (the diameter of photon sieve: 250 mu m, the focal length: 150 mu m, the diameter of the outmost pinhole: 420 nm). Some key techniques of this method are analyzed respectively, and the error analysis are done at the end of this paper. It provides a direction of nanoscale optical element fabrication with higher resolution and lower cost. (C) 2011 Elsevier B.V. All rights reserved.
