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题名:
Self-eliminating instrumental frequency response from free carrier absorption signals for silicon wafer characterization
作者: Huang, Qiuping1,2; Li, Bincheng1
刊名: REVIEW OF SCIENTIFIC INSTRUMENTS
出版日期: 2011-04-01
卷号: 82, 期号:4
文章类型: Article
英文摘要: Accurate determination of electronic transport properties of semiconductor wafers with modulated free carrier absorption (MFCA) and multiparameter fitting requires the total elimination of instrumental response from the MFCA signals. In this paper, an approach to eliminate the effect of instrumental response on the frequency dependence of MFCA amplitude and phase is developed both theoretically and experimentally to simultaneously determine the transport properties (minority-carrier lifetime, carrier diffusion coefficient, and front surface recombination velocity) of silicon wafers. Experimental results showed that with the proposed method the instrumental frequency response was fully eliminated from the experimental MFCA data and had no impact on the multiparameter fitting, while with conventional methods the accuracy of the fitted transport parameters was influenced detrimentally by the errors of the measured instrumental frequency responses, in particular for the minority-carrier lifetime and the front surface recombination velocity. (C) 2011 American Institute of Physics. [doi:10.1063/1.3577043]
WOS标题词: Science & Technology ; Technology ; Physical Sciences
类目[WOS]: Instruments & Instrumentation ; Physics, Applied
研究领域[WOS]: Instruments & Instrumentation ; Physics
关键词[WOS]: INFRARED PHOTOCARRIER RADIOMETRY ; ELECTRONIC DEFECT ; AMPLIFICATION ; DEPENDENCE ; MODULATION ; ACCURACY ; CONTRAST ; BEAM
收录类别: SCI
语种: 英语
WOS记录号: WOS:000290051500004
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.ioe.ac.cn/handle/181551/3456
Appears in Collections:光电技术研究所被WoS收录文章_期刊论文

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作者单位: 1.Chinese Acad Sci, Inst Opt & Elect, Chengdu 610209, Sichuan, Peoples R China
2.Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China

Recommended Citation:
Huang, Qiuping,Li, Bincheng. Self-eliminating instrumental frequency response from free carrier absorption signals for silicon wafer characterization[J]. REVIEW OF SCIENTIFIC INSTRUMENTS,2011,82(4).
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