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题名:
Electronic transport characterization of silicon wafers by combination of modulated free carrier absorption and photocarrier radiometry
作者: Huang, Qiuping1,2; Li, Bincheng1
刊名: JOURNAL OF APPLIED PHYSICS
出版日期: 2011-01-15
卷号: 109, 期号:2
文章类型: Article
英文摘要: A combined modulated free carrier absorption (MFCA) and photocarrier radiometry (PCR) technique is developed to determine simultaneously the electronic transport properties (carrier diffusion coefficient, carrier lifetime, and front surface recombination velocity) of silicon wafers. Comparative computer simulations are carried out to investigate how the experimental measurement errors affect the simultaneous determination of the electronic transport parameters by introducing random or systematic errors into the simulated MFCA and PCR data and statistically analyzing the fitted results, by means of separate MFCA and PCR, as well as the combined MFCA and PCR through fitting the experimental dependences of signal amplitudes and phases to the corresponding theoretical models via a multiparameter fitting procedure, respectively. The simulation results show that with the combined MFCA and PCR the effect of experimental errors on the simultaneous determination of the transport parameters is significantly reduced and therefore the accuracy of the fitted results is greatly improved. Experiments with two c-Si wafers with the three methods were performed and the results were compared. The experimental results showed that the combined MFCA and PCR provided the most accurate fitted transport parameters, in agreement with the simulation results. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3536620]
WOS标题词: Science & Technology ; Physical Sciences
类目[WOS]: Physics, Applied
研究领域[WOS]: Physics
关键词[WOS]: SURFACE RECOMBINATION VELOCITY ; PHOTOTHERMAL RADIOMETRY ; SI WAFERS ; 3-DIMENSIONAL THEORY ; SEMICONDUCTORS ; BULK ; DEFLECTION ; MICROSCOPY ; LIFETIMES ; ACCURACY
收录类别: SCI
语种: 英语
WOS记录号: WOS:000286896400046
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.ioe.ac.cn/handle/181551/3448
Appears in Collections:光电技术研究所被WoS收录文章_期刊论文

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作者单位: 1.Chinese Acad Sci, Inst Opt & Elect, Chengdu 610209, Sichuan, Peoples R China
2.Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China

Recommended Citation:
Huang, Qiuping,Li, Bincheng. Electronic transport characterization of silicon wafers by combination of modulated free carrier absorption and photocarrier radiometry[J]. JOURNAL OF APPLIED PHYSICS,2011,109(2).
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