IOE OpenIR  > 光电技术研究所被WoS收录文章
Experimental analysis of solid immersion interference lithography based on backside exposure technique
Li, Xupeng1; Shi, Sha1; Zhang, Zhiyou1; Wang, Jingquan1; Li, Shuhong1; Gao, Fuhua1; Shi, Ruiying1; Du, Jinglei1; Du, Chunlei2; Zhang, Yixiao1
Source PublicationMICROELECTRONIC ENGINEERING
Volume88Issue:8Pages:2509-2512
2011-08-01
Language英语
Indexed BySCI
WOS IDWOS:000293663400218
SubtypeArticle
AbstractWe report a method of fabricating metal nano-grating by Solid immersion Interference lithography based on Backside exposure technique (SIB). Solid immersion lithography can improve the resolution of interference patterns by a factor of n (refractive index of prism), and backside exposure technique can improve the energy utilization ratio and protect the surface of the resist from being contaminated. In the process of fabrication, a high quality sacrificial layer (dielectric grating with high modulation depth and appropriate duty ratio) is important for transferring the patterns to the metal film. We optimized the exposure/development time by simulating the process of backside exposure. Simulation and experiment results show that: using 441.6 nm wavelength laser, a series of subwavelength patterns (used as sacrificial layer) with high modulation depth and appropriate duty ratio can be gotten, the feature size of the patterns can be down to 80 nm which is less than 0.18 lambda. Using optimized condition, high quality sacrificial layer can be achieved by using the backside exposure technique. Backside exposure technique has a greater exposure/development time tolerance for fabricating nano-patterns than the conventional interference lithography, which can be used for nano-metal grating fabrication. (C) 2011 Elsevier B.V. All rights reserved.
KeywordSolid Immersion Interference Lithography Backside Exposure Technique
WOS Research AreaEngineering ; Science & Technology - Other Topics ; Optics ; Physics
WOS SubjectEngineering, Electrical & Electronic ; Nanoscience & Nanotechnology ; Optics ; Physics, Applied
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Document Type期刊论文
Identifierhttp://ir.ioe.ac.cn/handle/181551/3443
Collection光电技术研究所被WoS收录文章
Affiliation1.Sichuan Univ, Sch Phys, Chengdu 610064, Peoples R China
2.CAS, Inst Opt & Elect, Chengdu 610209, Peoples R China
Recommended Citation
GB/T 7714
Li, Xupeng,Shi, Sha,Zhang, Zhiyou,et al. Experimental analysis of solid immersion interference lithography based on backside exposure technique[J]. MICROELECTRONIC ENGINEERING,2011,88(8):2509-2512.
APA Li, Xupeng.,Shi, Sha.,Zhang, Zhiyou.,Wang, Jingquan.,Li, Shuhong.,...&Zhang, Yixiao.(2011).Experimental analysis of solid immersion interference lithography based on backside exposure technique.MICROELECTRONIC ENGINEERING,88(8),2509-2512.
MLA Li, Xupeng,et al."Experimental analysis of solid immersion interference lithography based on backside exposure technique".MICROELECTRONIC ENGINEERING 88.8(2011):2509-2512.
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