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题名:
Analysis of fabricating arbitrary nanoscale patterns by LSPP direct writing lithography with two-dimensional metal hole-array
作者: Shi, Sha1; Zhang, Zhiyou1; Shi, Ruiying1; Niu, Xiaoyun1; Li, Shuhong1; Li, Min1; Wang, Jingquan1; Du, Jinglei1; Gao, Fuhua1; Du, Chunlei2
刊名: MICROELECTRONIC ENGINEERING
出版日期: 2011-08-01
卷号: 88, 期号:8, 页码:1931-1934
关键词: TMH ; Local surface plasmon polariton ; Parallel direct writing lithography
文章类型: Article
英文摘要: We propose to use two-dimensional metal hole-array (TMH) and spatial light modulator (SLM) technology to construct a parallel direct-writing system. SLM and movable platform are used to control the system for realizing multi-beam parallel scanning exposure to fabricate arbitrary patterns. In this system TMH is the key component which focuses the incident light beams into light spots in the photoresist by exciting local surface plasmon polariton (LSPP). Parameters of TMH are optimized to improve the focusing efficiency and transmission depth of the light spots. Theoretical analysis and numerical simulations show that the feature size and transmission depth can reach sub-80 nm and 90 nm, respectively, by an optimized TMH, which is feasible for parallel direct writing lithography. (C) 2011 Elsevier B.V. All rights reserved.
WOS标题词: Science & Technology ; Technology ; Physical Sciences
类目[WOS]: Engineering, Electrical & Electronic ; Nanoscience & Nanotechnology ; Optics ; Physics, Applied
研究领域[WOS]: Engineering ; Science & Technology - Other Topics ; Optics ; Physics
关键词[WOS]: TRANSMISSION ; GRATINGS
收录类别: SCI
语种: 英语
WOS记录号: WOS:000293663400072
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.ioe.ac.cn/handle/181551/3427
Appears in Collections:光电技术研究所被WoS收录文章_期刊论文

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作者单位: 1.Sichuan Univ, Sch Phys, Chengdu 610064, Peoples R China
2.CAS, Inst Opt & Elect, Chengdu 610209, Peoples R China

Recommended Citation:
Shi, Sha,Zhang, Zhiyou,Shi, Ruiying,et al. Analysis of fabricating arbitrary nanoscale patterns by LSPP direct writing lithography with two-dimensional metal hole-array[J]. MICROELECTRONIC ENGINEERING,2011,88(8):1931-1934.
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