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题名:
Infrared spectroscopic ellipsometry studies of ion-implanted and annealed silicon wafers
作者: Liu Xian-Ming1,2,3; Li Bin-Cheng1,2; Gao Wei-Dong1,2; Han Yan-Ling1,2
刊名: ACTA PHYSICA SINICA
出版日期: 2010-03-01
卷号: 59, 期号:3, 页码:1632-1637
关键词: infrared spectroscopic ellipsometry ; ion implantation ; Drude model ; dispersion relation
文章类型: Article
英文摘要: The optical properties of the ion-implanted and annealed silicon wafer in visible spectral range are close to the single crystalline silicon due to the annealing-induced recrystallization, resulting in the unavailability of normal visible spectroscopic ellipsometry (SE) measurements. In this study, the SE measurements are performed in infrared range (2 20 mu m) to characterize the implanted and annealed wafers. An optical model based on the classical Drude free-carrier absorption equation is developed, with which the impurity concentration profile, resistivity, mobility of the carriers, and the dispersion relations of the implanted layer are determined. The relationships between these parameters and the implantation dose are also analyzed. The results suggest that the infrared SE is an effective method to characterize the annealed silicon wafers. Longer wavelength should be used to distinguish lower impurity concentration.
WOS标题词: Science & Technology ; Physical Sciences
类目[WOS]: Physics, Multidisciplinary
研究领域[WOS]: Physics
关键词[WOS]: SI(100) WAFERS
收录类别: SCI
语种: 英语
WOS记录号: WOS:000276004500032
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.ioe.ac.cn/handle/181551/3377
Appears in Collections:光电技术研究所被WoS收录文章_期刊论文

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作者单位: 1.Chinese Acad Sci, Key Lab Beam Control, Chengdu 610209, Peoples R China
2.Chinese Acad Sci, Inst Opt & Elect, Chengdu 610209, Peoples R China
3.Chinese Acad Sci, Grad Sch, Beijing 100049, Peoples R China

Recommended Citation:
Liu Xian-Ming,Li Bin-Cheng,Gao Wei-Dong,et al. Infrared spectroscopic ellipsometry studies of ion-implanted and annealed silicon wafers[J]. ACTA PHYSICA SINICA,2010,59(3):1632-1637.
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