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题名:
Thermal annealing induced photocarrier radiometry enhancement for ion implanted silicon wafers
作者: Liu Xian-Ming1,2; Li Bin-Cheng1; Huang Qiu-Ping1,2
刊名: CHINESE PHYSICS B
出版日期: 2010-09-01
卷号: 19, 期号:9
关键词: photocarrier radiometry ; ion implantation ; thermal annealing ; silicon
文章类型: Article
英文摘要: An experimental study on the photocarrier radiometry signals of As(+) ion implanted silicon wafers before and after rapid thermal annealing is performed. The dependences of photocarrier radiometry amplitude on ion implantation dose (1x10(11)-1x10(16)/cm(2)), implantation energy (20-140 keV) and subsequent isochronical annealing temperature (500-1100 degrees C are investigated. The results show that photocarrier radiometry signals are greatly enhanced for implanted samples annealed at high temperature, especially for those with a high implantation dose. The reduced surface recombination rate resulting from a high built-in electric field generated by annealing-activated impurities in the pn junction is believed to be responsible for the photocarrier radiometry signal enhancement. Photocarrier radiometry is contactless and can therefore be used as an effective in-line tool for the thermal annealing process monitoring of the ion-implanted wafers in semiconductor industries.
WOS标题词: Science & Technology ; Physical Sciences
类目[WOS]: Physics, Multidisciplinary
研究领域[WOS]: Physics
关键词[WOS]: ROOM-TEMPERATURE ; PHOTOLUMINESCENCE ; LUMINESCENCE ; DEPENDENCE ; DIODES ; DEFECT
收录类别: SCI
语种: 英语
WOS记录号: WOS:000282186400085
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.ioe.ac.cn/handle/181551/3338
Appears in Collections:光电技术研究所被WoS收录文章_期刊论文

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作者单位: 1.Chinese Acad Sci, Inst Opt & Elect, Chengdu 610209, Peoples R China
2.Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China

Recommended Citation:
Liu Xian-Ming,Li Bin-Cheng,Huang Qiu-Ping. Thermal annealing induced photocarrier radiometry enhancement for ion implanted silicon wafers[J]. CHINESE PHYSICS B,2010,19(9).
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