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题名:
IR variable angle spectroscopic ellipsometry study of high dose ion-implanted and annealed silicon wafers
作者: Liu, Xianming1,2; Li, Bincheng1
刊名: JOURNAL OF APPLIED PHYSICS
出版日期: 2009
卷号: 105, 期号:1
文章类型: Article
英文摘要: We employed Fourier transform variable angle infrared spectroscopic ellipsometry (IRSE) in wavelength range of 2-30 mu m to investigate a group of silicon wafers, which are implanted with high doses and annealed in high temperature. The IRSE spectra for samples with different implantation doses were analyzed physically. When the semiconductor is heavily doped, it becomes degenerated and the doped impurities cannot ionize completely. For the analysis of the IRSE data, we quantitated the ionization probability as a function of impurity concentration in the optical model to describe the carrier concentration profile, by which the impurity concentration and carrier concentration profiles can be determined simultaneously. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3060996]
WOS标题词: Science & Technology ; Physical Sciences
类目[WOS]: Physics, Applied
研究领域[WOS]: Physics
关键词[WOS]: DAMAGE DEPTH PROFILES ; SI(100) WAFERS
收录类别: SCI
语种: 英语
WOS记录号: WOS:000262534100066
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.ioe.ac.cn/handle/181551/3300
Appears in Collections:光电技术研究所被WoS收录文章_期刊论文

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作者单位: 1.Chinese Acad Sci, Inst Opt & Elect, Chengdu 610209, Peoples R China
2.Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China

Recommended Citation:
Liu, Xianming,Li, Bincheng. IR variable angle spectroscopic ellipsometry study of high dose ion-implanted and annealed silicon wafers[J]. JOURNAL OF APPLIED PHYSICS,2009,105(1).
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