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Breaking the feature sizes down to sub-22 nm by plasmonic interference lithography using dielectric-metal multilayer
Yang, Xuefeng; Zeng, Beibei; Wang, Changtao; Luo, Xiangang
Source PublicationOPTICS EXPRESS
Volume17Issue:24Pages:21560-21565
2009-11-23
Language英语
Indexed BySCI
WOS IDWOS:000272229400024
SubtypeArticle
AbstractWe have developed the plasmonic interference lithography technique to achieve the feature sizes theoretically down to sub-22 nm even to 16.5 nm by using dielectric-metal multilayer (DMM) with diffraction-limited masks at the wavelength of 193 nm with p-polarization. An 8 pairs of GaN (10 nm) / Al (12 nm) multilayer is designed as a filter allowing only a part of high wavevector k (evanescent waves) to pass through for interference lithography. The analysis of the influence by the number of DMM layers is presented. 4 pairs of the proposed multilayer can be competent for pattern the minimal feature size down to 21.5 nm at the visibility about 0.4 to satisfy the minimum visibility required with positive resist. Finite-difference time-domain analysis method is used to demonstrate the validity of the theory. (C) 2009 Optical Society of America
WOS KeywordNANOLITHOGRAPHY ; METAMATERIALS
WOS Research AreaOptics
WOS SubjectOptics
Citation statistics
Cited Times:48[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.ioe.ac.cn/handle/181551/3254
Collection光电技术研究所被WoS收录文章
AffiliationChinese Acad Sci, State Key Lab Opt Technol Microfabricat, Inst Opt & Elect, Chengdu 610209, Peoples R China
Recommended Citation
GB/T 7714
Yang, Xuefeng,Zeng, Beibei,Wang, Changtao,et al. Breaking the feature sizes down to sub-22 nm by plasmonic interference lithography using dielectric-metal multilayer[J]. OPTICS EXPRESS,2009,17(24):21560-21565.
APA Yang, Xuefeng,Zeng, Beibei,Wang, Changtao,&Luo, Xiangang.(2009).Breaking the feature sizes down to sub-22 nm by plasmonic interference lithography using dielectric-metal multilayer.OPTICS EXPRESS,17(24),21560-21565.
MLA Yang, Xuefeng,et al."Breaking the feature sizes down to sub-22 nm by plasmonic interference lithography using dielectric-metal multilayer".OPTICS EXPRESS 17.24(2009):21560-21565.
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