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题名:
Breaking the feature sizes down to sub-22 nm by plasmonic interference lithography using dielectric-metal multilayer
作者: Yang, Xuefeng; Zeng, Beibei; Wang, Changtao; Luo, Xiangang
刊名: OPTICS EXPRESS
出版日期: 2009-11-23
卷号: 17, 期号:24, 页码:21560-21565
文章类型: Article
英文摘要: We have developed the plasmonic interference lithography technique to achieve the feature sizes theoretically down to sub-22 nm even to 16.5 nm by using dielectric-metal multilayer (DMM) with diffraction-limited masks at the wavelength of 193 nm with p-polarization. An 8 pairs of GaN (10 nm) / Al (12 nm) multilayer is designed as a filter allowing only a part of high wavevector k (evanescent waves) to pass through for interference lithography. The analysis of the influence by the number of DMM layers is presented. 4 pairs of the proposed multilayer can be competent for pattern the minimal feature size down to 21.5 nm at the visibility about 0.4 to satisfy the minimum visibility required with positive resist. Finite-difference time-domain analysis method is used to demonstrate the validity of the theory. (C) 2009 Optical Society of America
WOS标题词: Science & Technology ; Physical Sciences
类目[WOS]: Optics
研究领域[WOS]: Optics
关键词[WOS]: NANOLITHOGRAPHY ; METAMATERIALS
收录类别: SCI
语种: 英语
WOS记录号: WOS:000272229400024
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.ioe.ac.cn/handle/181551/3254
Appears in Collections:光电技术研究所被WoS收录文章_期刊论文

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作者单位: Chinese Acad Sci, State Key Lab Opt Technol Microfabricat, Inst Opt & Elect, Chengdu 610209, Peoples R China

Recommended Citation:
Yang, Xuefeng,Zeng, Beibei,Wang, Changtao,et al. Breaking the feature sizes down to sub-22 nm by plasmonic interference lithography using dielectric-metal multilayer[J]. OPTICS EXPRESS,2009,17(24):21560-21565.
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