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Photocarrier radiometric and ellipsometric characterization of ion-implanted silicon wafers
Liu, Xianming1,2; Li, Bincheng1; Zhang, Xiren1
Source PublicationJOURNAL OF APPLIED PHYSICS
Volume103Issue:12
2008-06-15
Language英语
Indexed BySCI
WOS IDWOS:000257284100058
SubtypeArticle
AbstractThe photocarrier radiometry (PCR) responses of heavily implanted silicon wafers (As+ ion 1x10(13)-1x10(16) cm(-2)) were reported. The experimental dependence of the PCR amplitude on the implant dose was in good agreement with the theoretical prediction calculated with a three-layer PCR model, in which the implanted silicon wafer was assumed to be consisted of an amorphous, a polycrystalline, and a single-crystalline Si layer. The structural, optical, and transport properties of all layers used in the calculations were determined experimentally with spectroscopic ellipsometry (SE), spectrophotometry, and laterally resolved modulated free-carrier absorption to minimize the uncertainties of the theoretical calculations. The dose dependence of the PCR amplitude showed a nonmonotonicity at high dose implantation, as confirmed by the SE measurements. (C) 2008 American Institute of Physics.
WOS KeywordDOSE-DEPENDENCE ; LAYERS
WOS Research AreaPhysics
WOS SubjectPhysics, Applied
Citation statistics
Cited Times:9[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.ioe.ac.cn/handle/181551/3240
Collection光电技术研究所被WoS收录文章
Affiliation1.Chinese Acad Sci, Inst Opt & Elect, Chengdu 610209, Sichuan, Peoples R China
2.Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China
Recommended Citation
GB/T 7714
Liu, Xianming,Li, Bincheng,Zhang, Xiren. Photocarrier radiometric and ellipsometric characterization of ion-implanted silicon wafers[J]. JOURNAL OF APPLIED PHYSICS,2008,103(12).
APA Liu, Xianming,Li, Bincheng,&Zhang, Xiren.(2008).Photocarrier radiometric and ellipsometric characterization of ion-implanted silicon wafers.JOURNAL OF APPLIED PHYSICS,103(12).
MLA Liu, Xianming,et al."Photocarrier radiometric and ellipsometric characterization of ion-implanted silicon wafers".JOURNAL OF APPLIED PHYSICS 103.12(2008).
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