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题名:
Photocarrier radiometric and ellipsometric characterization of ion-implanted silicon wafers
作者: Liu, Xianming1,2; Li, Bincheng1; Zhang, Xiren1
刊名: JOURNAL OF APPLIED PHYSICS
出版日期: 2008-06-15
卷号: 103, 期号:12
文章类型: Article
英文摘要: The photocarrier radiometry (PCR) responses of heavily implanted silicon wafers (As+ ion 1x10(13)-1x10(16) cm(-2)) were reported. The experimental dependence of the PCR amplitude on the implant dose was in good agreement with the theoretical prediction calculated with a three-layer PCR model, in which the implanted silicon wafer was assumed to be consisted of an amorphous, a polycrystalline, and a single-crystalline Si layer. The structural, optical, and transport properties of all layers used in the calculations were determined experimentally with spectroscopic ellipsometry (SE), spectrophotometry, and laterally resolved modulated free-carrier absorption to minimize the uncertainties of the theoretical calculations. The dose dependence of the PCR amplitude showed a nonmonotonicity at high dose implantation, as confirmed by the SE measurements. (C) 2008 American Institute of Physics.
WOS标题词: Science & Technology ; Physical Sciences
类目[WOS]: Physics, Applied
研究领域[WOS]: Physics
关键词[WOS]: DOSE-DEPENDENCE ; LAYERS
收录类别: SCI
语种: 英语
WOS记录号: WOS:000257284100058
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.ioe.ac.cn/handle/181551/3240
Appears in Collections:光电技术研究所被WoS收录文章_期刊论文

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作者单位: 1.Chinese Acad Sci, Inst Opt & Elect, Chengdu 610209, Sichuan, Peoples R China
2.Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China

Recommended Citation:
Liu, Xianming,Li, Bincheng,Zhang, Xiren. Photocarrier radiometric and ellipsometric characterization of ion-implanted silicon wafers[J]. JOURNAL OF APPLIED PHYSICS,2008,103(12).
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