In this paper, we demonstrate a modified coarse-fine alignment scheme designed for proximity lithography. Both wafer alignment mark and mask alignment mark consists of linear grating arrays and "+" bar. Coarse alignment and fine alignment could work together to achieve the perfect alignment. Thereinto, coarse alignment, measured from two superposed "+" bars, guarantees the misalignment across wafer and mask within the measurement range of fine alignment, which is based on moire fringes formed by the superposition of linear grating arrays. Then we conduct the experiments using a nanometer actuator to drive the wafer alignment mark meanwhile keeping the mask alignment mark motionless, which validates the feasibility and rationality of our designed scheme. (C) 2014 Elsevier GmbH. All rights reserved.
Science & Technology
; Physical Sciences
; PLATE-ARRAY LITHOGRAPHY
1.Chinese Acad Sci, Inst Opt & Elect, Chengdu 610209, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100039, Peoples R China 3.Univ Elect Sci & Technol China, Sch Optoelect Informat, Chengdu 610054, Peoples R China
Di, Chengliang,Zhu, Jiangping,Yan, Wei,et al. A modified alignment method based on four-quadrant-grating moire for proximity lithography[J]. OPTIK,2014,125(17):4868-4872.