The fringe pattern phase analysis method is proposed for the leveling of mask and wafer in proximity lithography. The tilt between mask and wafer in the space is reflected in the tilted fringe pattern. The method combining the 2-D Fourier transform and 2-D Hanning window is proposed for processing the tilted fringe pattern. The offset and angle of tilt are extracted through phase analysis. Computer simulation and experiment are both performed to verify this method. The results indicate that the tilt of the mask and wafer in the space can be extracted with high accuracy through this method. (C) 2014 Elsevier GmbH. All rights reserved.
1.Southwest Univ Sci & Technol, Fac Informat & Engn, Mianyang 621010, Sichuan, Peoples R China 2.S China Univ Technol, Sch Elect & Informat, Guangzhou 510640, Guangdong, Peoples R China 3.Chinese Acad Sci, Inst Opt & Elect, Chengdu 610209, Peoples R China 4.Robot Technol Used Special Environm Key Lab Sichu, Mianyang 621010, Sichuan, Peoples R China
Xu, Feng,Zhou, Shaolin,Hu, Song. The leveling of mask and wafer in proximity nanolithography using fringe pattern phase analysis[J]. OPTIK,2014,125(13):3176-3180.