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题名:
Photocarrier radiometry of ion-implanted and thermally annealed silicon wafers with multiple-wavelength excitations
作者: Huang, Qiuping1,2; Li, Bincheng1
刊名: JOURNAL OF APPLIED PHYSICS
出版日期: 2012-05-01
卷号: 111, 期号:9
文章类型: Article
英文摘要: The electronic transport properties of ion-implanted and thermally annealed silicon wafers and their effects on the room temperature photoluminescence have been investigated by a two-layer photocarrier radiometry (PCR) model with multiple-wavelength excitations. Simulations are carried out to show the dependences of the PCR amplitudes on the structural and transport properties (thickness, minority carrier lifetime, diffusion coefficient, and front surface recombination velocity) of the implanted layer with excitation in a wide spectral range, respectively. Experiments on As+ implanted and thermally annealed silicon wafers with ion fluences ranging from 5 X 10(14) to 1 X 10(16) cm(-2) were performed, with 830 nm, 660 nm, and 405 nm excitations. Both the simulated and experimental results show that the transport properties of the implanted layer can be obtained by fitting the PCR amplitudes under the multi-wavelength excitations at a fixed modulation frequency to the theoretical model via a multi-parameter fitting procedure. The ion implantation and thermal annealing processes result in significant decreases of the minority carrier lifetime and diffusion coefficient of the implanted layer, and the recombination velocity at the front surface, and all three parameters decrease with the increasing ion fluence. The photoluminescence of the ion-implanted and thermally annealed wafers is significantly stronger than that of the non-implanted and non-annealed wafer, mainly due to the considerable decline of the front surface recombination velocity. In addition, the decreasing carrier diffusion coefficient of the implanted layer may be another reason for the enhancement of the photoluminescence under long-wavelength excitations. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4716032]
WOS标题词: Science & Technology ; Physical Sciences
类目[WOS]: Physics, Applied
研究领域[WOS]: Physics
关键词[WOS]: LIGHT-EMITTING-DIODES ; ROOM-TEMPERATURE ; DISLOCATION LOOPS ; DEPENDENCE ; ACCURACY ; ORIGIN
收录类别: SCI
语种: 英语
WOS记录号: WOS:000304109900078
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.ioe.ac.cn/handle/181551/2408
Appears in Collections:光电技术研究所被WoS收录文章_期刊论文

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作者单位: 1.Chinese Acad Sci, Inst Opt & Elect, Chengdu 610209, Sichuan, Peoples R China
2.Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China

Recommended Citation:
Huang, Qiuping,Li, Bincheng. Photocarrier radiometry of ion-implanted and thermally annealed silicon wafers with multiple-wavelength excitations[J]. JOURNAL OF APPLIED PHYSICS,2012,111(9).
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