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题名:
Accuracy Improvement of Multi-parameter Estimation in Combined Photocarrier Radiometry and Free Carrier Absorption for Characterization of Silicon Wafers
作者: Huang, Qiuping1,2; Li, Bincheng1; Ren, Shengdong1,2
刊名: INTERNATIONAL JOURNAL OF THERMOPHYSICS
出版日期: 2012-11-01
卷号: 33, 期号:10-11, 页码:2076-2081
关键词: Electronic transport properties ; Free carrier absorption ; Multi-parameter fitting ; Photocarrier radiometry ; Silicon
文章类型: Article
英文摘要: Numerical simulations are performed to investigate the effect of experimental parameters on the simultaneous determination of the electronic transport properties (namely, the carrier lifetime, the carrier diffusion coefficient, and the surface recombination velocities) of semiconductor wafers in the combined photocarrier radiometry (PCR) and free carrier absorption (FCA) technique via a multi-parameter estimation procedure. The uncertainties of the fitted parameter values are analyzed by investigating the dependence of a mean square variance including both amplitude and phase errors on the corresponding transport parameters. Simulation results show that the optimal experimental conditions with a combination of an appropriate pump-probe-beam separation and a small (comparable to or slightly larger than the pump beam radius) detection radius in FCA, as well as a large (1 mm) detection radius in PCR, can noticeably reduce the uncertainties of the simultaneously fitted transport properties of wafers.
WOS标题词: Science & Technology ; Physical Sciences ; Technology
类目[WOS]: Thermodynamics ; Chemistry, Physical ; Mechanics ; Physics, Applied
研究领域[WOS]: Thermodynamics ; Chemistry ; Mechanics ; Physics
关键词[WOS]: TRANSPORT-PROPERTIES
收录类别: SCI ; ISTP
语种: 英语
WOS记录号: WOS:000312072300045
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.ioe.ac.cn/handle/181551/2395
Appears in Collections:光电技术研究所被WoS收录文章_期刊论文

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作者单位: 1.Chinese Acad Sci, Inst Opt & Elect, Chengdu 610209, Sichuan, Peoples R China
2.Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China

Recommended Citation:
Huang, Qiuping,Li, Bincheng,Ren, Shengdong. Accuracy Improvement of Multi-parameter Estimation in Combined Photocarrier Radiometry and Free Carrier Absorption for Characterization of Silicon Wafers[J]. INTERNATIONAL JOURNAL OF THERMOPHYSICS,2012,33(10-11):2076-2081.
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