It is experimentally observed that the photocarrier radiometry (PCR) signals of silicon wafers are greatly enhanced by ion implantation and thermal annealing. A two-layer theoretical model is employed to analyze the experimental observation in detail. Theoretical simulations indicate that the increased optical-to-electronic quantum efficiency of the implanted layer could be the main photoluminescence mechanism contributing to the PCR signal enhancement. The decreased surface recombination velocity induced by surface electric field and the change of electronic transport properties of the implanted layer also contribute to the signal enhancement.
1.Chongqing Univ, Key Lab Optoelect Technol & Syst, Educ Minist China, Chongqing 400044, Peoples R China 2.Chinese Acad Sci, Inst Opt & Elect, Chengdu 610209, Sichuan, Peoples R China
Liu, Xianming,Li, Bincheng,Huang, Qiuping. Analysis of Enhanced Photocarrier Radiometry Signals for Ion-Implanted and Annealed Silicon Wafers[J]. INTERNATIONAL JOURNAL OF THERMOPHYSICS,2012,33(10-11):2089-2094.