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题名:
Characterization of Arsenic Ultra-Shallow Junctions in Silicon Using Photocarrier Radiometry and Spectroscopic Ellipsometry
作者: Huang, Qiuping1,2; Li, Bincheng1; Gao, Weidong1
刊名: INTERNATIONAL JOURNAL OF THERMOPHYSICS
出版日期: 2012-11-01
卷号: 33, 期号:10-11, 页码:2082-2088
关键词: Ion implantation ; Photocarrier radiometry ; Silicon ; Spectroscopic ellipsometry ; Ultra-shallow junction
文章类型: Article
英文摘要: Photocarrier radiometry (PCR) and spectroscopic ellipsometry (SE) techniques were employed to measure ultra-shallow junction (USJ) wafers. These USJ wafers were prepared by As+ ion implantation at energies of 0.5 keV to 5 keV, at a dose of 1 x 10(15) As+/cm(2) and spike annealing. The experimental data showed that the PCR signal versus implantation energy exhibits a monotonic behavior. The damaged layer of the as-implanted wafer and the recrystallization and activation of the post-annealed wafer were evaluated by SE in the spectral range from 0.27 mu m to 20 mu m. PCR and SE were shown to provide non-destructive metrology tools for process monitoring in USJ fabrication.
WOS标题词: Science & Technology ; Physical Sciences ; Technology
类目[WOS]: Thermodynamics ; Chemistry, Physical ; Mechanics ; Physics, Applied
研究领域[WOS]: Thermodynamics ; Chemistry ; Mechanics ; Physics
收录类别: SCI ; ISTP
语种: 英语
WOS记录号: WOS:000312072300046
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.ioe.ac.cn/handle/181551/2371
Appears in Collections:光电技术研究所被WoS收录文章_期刊论文

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作者单位: 1.Chinese Acad Sci, Inst Opt & Elect, Chengdu 610209, Sichuan, Peoples R China
2.Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China

Recommended Citation:
Huang, Qiuping,Li, Bincheng,Gao, Weidong. Characterization of Arsenic Ultra-Shallow Junctions in Silicon Using Photocarrier Radiometry and Spectroscopic Ellipsometry[J]. INTERNATIONAL JOURNAL OF THERMOPHYSICS,2012,33(10-11):2082-2088.
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