Photocarrier radiometry (PCR) and spectroscopic ellipsometry (SE) techniques were employed to measure ultra-shallow junction (USJ) wafers. These USJ wafers were prepared by As+ ion implantation at energies of 0.5 keV to 5 keV, at a dose of 1 x 10(15) As+/cm(2) and spike annealing. The experimental data showed that the PCR signal versus implantation energy exhibits a monotonic behavior. The damaged layer of the as-implanted wafer and the recrystallization and activation of the post-annealed wafer were evaluated by SE in the spectral range from 0.27 mu m to 20 mu m. PCR and SE were shown to provide non-destructive metrology tools for process monitoring in USJ fabrication.
1.Chinese Acad Sci, Inst Opt & Elect, Chengdu 610209, Sichuan, Peoples R China 2.Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China
Huang, Qiuping,Li, Bincheng,Gao, Weidong. Characterization of Arsenic Ultra-Shallow Junctions in Silicon Using Photocarrier Radiometry and Spectroscopic Ellipsometry[J]. INTERNATIONAL JOURNAL OF THERMOPHYSICS,2012,33(10-11):2082-2088.