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题名:
Engineering heavily doped silicon for broadband absorber in the terahertz regime
作者: Pu, Mingbo; Wang, Min; Hu, Chenggang; Huang, Cheng; Zhao, Zeyu; Wang, Yanqin; Luo, Xiangang
刊名: OPTICS EXPRESS
出版日期: 2012-11-05
卷号: 20, 期号:23, 页码:25513-25519
文章类型: Article
英文摘要: Highly efficient absorber is of particular importance in terahertz regime as naturally occurring materials with frequency-selective absorption in this frequency band is difficult to find. Here we present the design and characterization of a broadband terahertz absorber based on heavily Boron-doped silicon (0.7676 Omega cm) grating. It is numerically demonstrated by utilizing both the zero- and first order diffraction in the doped silicon wafer, relative absorption bandwidth larger than 100% can be achieved. Furthermore, the design can be easily extended to higher frequencies as the optical property of doped silicon is tunable through changing the doping concentration. (c) 2012 Optical Society of America
WOS标题词: Science & Technology ; Physical Sciences
类目[WOS]: Optics
研究领域[WOS]: Optics
关键词[WOS]: METAMATERIAL ABSORBER ; PERFECT ABSORBER ; ABSORPTION ; DESIGN ; SURFACE ; FILM
收录类别: SCI
语种: 英语
WOS记录号: WOS:000311340300060
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.ioe.ac.cn/handle/181551/2360
Appears in Collections:光电技术研究所被WoS收录文章_期刊论文

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作者单位: Chinese Acad Sci, State Key Lab Opt Technol Microfabricat, Inst Opt & Elect, Chengdu 610209, Peoples R China

Recommended Citation:
Pu, Mingbo,Wang, Min,Hu, Chenggang,et al. Engineering heavily doped silicon for broadband absorber in the terahertz regime[J]. OPTICS EXPRESS,2012,20(23):25513-25519.
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