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题名:
Sensitivity analysis of laterally resolved free carrier absorption determination of electronic transport properties of silicon wafers
作者: Zhang, XR (Zhang, Xiren) ; Li, BC (Li, Bincheng) ; Gao, CM (Gao, Chunming)
刊名: JOURNAL OF APPLIED PHYSICS
出版日期: 2008
卷号: 103, 期号:3, 页码:Art. No. 033709 FEB 1
学科分类: 光学薄膜技术
文章类型: 期刊论文
中文摘要: Simulations are performed to investigate the uniqueness of simultaneous determination of electronic transport properties (the carrier lifetime, the carrier diffusivity, and the front surface recombination velocity) of silicon wafers by laterally resolved
收录类别: SCI ; Ei
语种: 英语
ISSN号: 0021-8979
内容类型: 期刊论文
URI标识: http://ir.ioe.ac.cn/handle/181551/2077
Appears in Collections:薄膜光学技术研究室(十一室)_期刊论文

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Recommended Citation:
Zhang, XR ,Li, BC ,Gao, CM . Sensitivity analysis of laterally resolved free carrier absorption determination of electronic transport properties of silicon wafers[J]. JOURNAL OF APPLIED PHYSICS,2008,103(3):Art. No. 033709 FEB 1.
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