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Sensitivity analysis of laterally resolved free carrier absorption determination of electronic transport properties of silicon wafers
Zhang, XR (Zhang, Xiren); Li, BC (Li, Bincheng); Gao, CM (Gao, Chunming)
Source PublicationJOURNAL OF APPLIED PHYSICS
Volume103Issue:3Pages:Art. No. 033709 FEB 1
2008
Language英语
ISSN0021-8979
Indexed BySCI ; Ei
Subtype期刊论文
AbstractSimulations are performed to investigate the uniqueness of simultaneous determination of electronic transport properties (the carrier lifetime, the carrier diffusivity, and the front surface recombination velocity) of silicon wafers by laterally resolved
Document Type期刊论文
Identifierhttp://ir.ioe.ac.cn/handle/181551/2077
Collection薄膜光学技术研究室(十一室)
Recommended Citation
GB/T 7714
Zhang, XR ,Li, BC ,Gao, CM . Sensitivity analysis of laterally resolved free carrier absorption determination of electronic transport properties of silicon wafers[J]. JOURNAL OF APPLIED PHYSICS,2008,103(3):Art. No. 033709 FEB 1.
APA Zhang, XR ,Li, BC ,&Gao, CM .(2008).Sensitivity analysis of laterally resolved free carrier absorption determination of electronic transport properties of silicon wafers.JOURNAL OF APPLIED PHYSICS,103(3),Art. No. 033709 FEB 1.
MLA Zhang, XR ,et al."Sensitivity analysis of laterally resolved free carrier absorption determination of electronic transport properties of silicon wafers".JOURNAL OF APPLIED PHYSICS 103.3(2008):Art. No. 033709 FEB 1.
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