Simulations are performed to investigate the uniqueness of simultaneous determination of electronic transport properties (the carrier lifetime, the carrier diffusivity, and the front surface recombination velocity) of silicon wafers by laterally resolved
Zhang, XR ,Li, BC ,Gao, CM . Sensitivity analysis of laterally resolved free carrier absorption determination of electronic transport properties of silicon wafers[J]. JOURNAL OF APPLIED PHYSICS,2008,103(3):Art. No. 033709 FEB 1.