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题名:
Analysis of free carrier absorption measurement of electronic transport properties of silicon wafers
作者: Zhang, X ; Li, B ; Gao, C
刊名: EUROPEAN PHYSICAL JOURNAL-SPECIAL TOPICS
出版日期: 2008
卷号: 153, 期号:1, 页码:279-281 JAN
学科分类: 光学薄膜技术
文章类型: 期刊论文
中文摘要: Sensitivity analysis of electronic transport property measurement of silicon wafers with modulated free carrier absorption (MFCA) technique and multiparameter fitting procedure is performed. The sensitivity of the multi-parameter estimate employing the dependences of the MFCA amplitude and phase on the pump-probe-beam separation measured at several modulation frequencies covering an appropriate range is theoretically compared with that employing only the dependences of the MFCA amplitude and phase on the modulation frequency. Simulation results show that the dependences of the MFCA amplitude and phase on the pump-probe beam separation are more sensitive to the electronic transport properties of silicon wafers than the frequency dependences. The electronic transport properties of the silicon wafers determined with the two-beam separation dependence are therefore more accurate than that determined with the frequency dependence. Comparative experiments with a silicon wafer are performed and the carrier lifetime, the carrier diffusivity, and the front surface recombination velocity are determined simultaneously and unambiguously with both techniques.
收录类别: SCI
语种: 英语
ISSN号: 1951-6355
内容类型: 期刊论文
URI标识: http://ir.ioe.ac.cn/handle/181551/2076
Appears in Collections:薄膜光学技术研究室(十一室)_期刊论文

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Recommended Citation:
Zhang, X,Li, B,Gao, C. Analysis of free carrier absorption measurement of electronic transport properties of silicon wafers[J]. EUROPEAN PHYSICAL JOURNAL-SPECIAL TOPICS,2008,153(1):279-281 JAN.
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文件名: 2008-197.pdf
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