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Analysis of free carrier absorption measurement of electronic transport properties of silicon wafers
Zhang, X; Li, B; Gao, C
Source PublicationEUROPEAN PHYSICAL JOURNAL-SPECIAL TOPICS
Volume153Issue:1Pages:279-281 JAN
2008
Language英语
ISSN1951-6355
Indexed BySCI
Subtype期刊论文
AbstractSensitivity analysis of electronic transport property measurement of silicon wafers with modulated free carrier absorption (MFCA) technique and multiparameter fitting procedure is performed. The sensitivity of the multi-parameter estimate employing the dependences of the MFCA amplitude and phase on the pump-probe-beam separation measured at several modulation frequencies covering an appropriate range is theoretically compared with that employing only the dependences of the MFCA amplitude and phase on the modulation frequency. Simulation results show that the dependences of the MFCA amplitude and phase on the pump-probe beam separation are more sensitive to the electronic transport properties of silicon wafers than the frequency dependences. The electronic transport properties of the silicon wafers determined with the two-beam separation dependence are therefore more accurate than that determined with the frequency dependence. Comparative experiments with a silicon wafer are performed and the carrier lifetime, the carrier diffusivity, and the front surface recombination velocity are determined simultaneously and unambiguously with both techniques.
Document Type期刊论文
Identifierhttp://ir.ioe.ac.cn/handle/181551/2076
Collection薄膜光学技术研究室(十一室)
Recommended Citation
GB/T 7714
Zhang, X,Li, B,Gao, C. Analysis of free carrier absorption measurement of electronic transport properties of silicon wafers[J]. EUROPEAN PHYSICAL JOURNAL-SPECIAL TOPICS,2008,153(1):279-281 JAN.
APA Zhang, X,Li, B,&Gao, C.(2008).Analysis of free carrier absorption measurement of electronic transport properties of silicon wafers.EUROPEAN PHYSICAL JOURNAL-SPECIAL TOPICS,153(1),279-281 JAN.
MLA Zhang, X,et al."Analysis of free carrier absorption measurement of electronic transport properties of silicon wafers".EUROPEAN PHYSICAL JOURNAL-SPECIAL TOPICS 153.1(2008):279-281 JAN.
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