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题名:
Photocarrier radiometric and ellipsometric characterization of ion-implanted silicon wafers
作者: Liu, XM (Liu, Xianming) ; Li, BC (Li, Bincheng) ; Zhang, XR (Zhang, Xiren)
刊名: JOURNAL OF APPLIED PHYSICS
出版日期: 2008
卷号: 103, 期号:12, 页码:Art. No. 123706 JUN 15
学科分类: 光学薄膜技术
文章类型: 期刊论文
中文摘要: The photocarrier radiometry (PCR) responses of heavily implanted silicon wafers (As+ ion 1x10(13)-1x10(16) cm(-2)) were reported. The experimental dependence of the PCR amplitude on the implant dose was in good agreement with the theoretical prediction ca
收录类别: SCI
语种: 英语
ISSN号: 0021-8979
内容类型: 期刊论文
URI标识: http://ir.ioe.ac.cn/handle/181551/2072
Appears in Collections:薄膜光学技术研究室(十一室)_期刊论文

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Recommended Citation:
Liu, XM ,Li, BC ,Zhang, XR . Photocarrier radiometric and ellipsometric characterization of ion-implanted silicon wafers[J]. JOURNAL OF APPLIED PHYSICS,2008,103(12):Art. No. 123706 JUN 15.
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