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IOE OpenIR  > 薄膜光学技术研究室(十一室)  > 期刊论文
题名:
Time-domain modulated free-carrier absorption measurements of recombination process in silicon wafers
作者: Gao, C ; Li, B ; Zhang, X
刊名: EUROPEAN PHYSICAL JOURNAL-SPECIAL TOPICS
出版日期: 2008
卷号: 153, 期号:1, 页码:275-277 JAN
学科分类: 光学薄膜技术
文章类型: 期刊论文
中文摘要: A time-domain modulated free-carrier absorption (MFCA) is developed both experimentally and theoretically to investigate the photo-carrier dynamics of silicon wafers illuminated by a square-wave-modulated super-band-gap laser beam. An explicit three-dimensional (3-D) theoretical expression for the temporal behavior of the MFCA signal is obtained by solving a 3-D carrier-diffusion equation The time-domain MFCA model is used to fit the experimental MFCA signals of p- and n-type Si wafers via a multi-parameter fitting procedure to determine simultaneously the electronic transport properties, that is, the bulk lifetime, the ambipolor diffusivity, and the front surface recombination velocity. The uncertainties of the fitted parameter values are estimated.
收录类别: SCI ; Ei
语种: 英语
ISSN号: 1951-6355
内容类型: 期刊论文
URI标识: http://ir.ioe.ac.cn/handle/181551/2063
Appears in Collections:薄膜光学技术研究室(十一室)_期刊论文

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Recommended Citation:
Gao, C,Li, B,Zhang, X. Time-domain modulated free-carrier absorption measurements of recombination process in silicon wafers[J]. EUROPEAN PHYSICAL JOURNAL-SPECIAL TOPICS,2008,153(1):275-277 JAN.
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文件名: 2008-180.pdf
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