Knowledge Management System Of Institute of optics and electronics, CAS
| Three-dimensional transient model for time-domain free-carrier absorption measurement of excess carriers in silicon wafers | |
| Ren, Shengdong1,2; Li, Bincheng1; Huang, Qiuping1,2 | |
| Source Publication | JOURNAL OF APPLIED PHYSICS
 |
| Volume | 114Issue:24 |
| 2013-12-28 | |
| Language | 英语 |
| Indexed By | SCI |
| WOS ID | WOS:000329173200029 |
| Subtype | Article |
| Abstract | A three-dimensional transient model for time-domain (modulated) free-carrier absorption (FCA) measurement was developed to describe the transport dynamics of photo-generated excess carriers in silicon (Si) wafers. With the developed transient model, numerical simulations were performed to investigate the dependences of the waveforms of the transient FCA signals on the electronic transport parameters of Si wafers and the geometric parameters of the FCA experiment. Experimental waveforms of FCA signals of both n- and p-type Si wafers with resistivity ranging 1-38 Omega.cm were then fitted to the three-dimensional transient model to extract simultaneously and unambiguously the transport parameters of Si wafers, namely, the carrier lifetime, the carrier diffusion coefficient, and the front surface recombination velocity via multi-parameter fitting. A basic agreement between the extracted parameter values and the literature values was obtained. (C) 2013 AIP Publishing LLC. |
| WOS Keyword | SURFACE RECOMBINATION ; BULK LIFETIME ; VELOCITIES ; PRINCIPLE |
| WOS Research Area | Physics |
| WOS Subject | Physics, Applied |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.ioe.ac.cn/handle/181551/1204 |
| Collection | 光电技术研究所被WoS收录文章 |
| Affiliation | 1.Chinese Acad Sci, Inst Opt & Elect, Chengdu 610209, Sichuan, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100039, Peoples R China |
| Recommended Citation GB/T 7714 | Ren, Shengdong,Li, Bincheng,Huang, Qiuping. Three-dimensional transient model for time-domain free-carrier absorption measurement of excess carriers in silicon wafers[J]. JOURNAL OF APPLIED PHYSICS,2013,114(24). |
| APA | Ren, Shengdong,Li, Bincheng,&Huang, Qiuping.(2013).Three-dimensional transient model for time-domain free-carrier absorption measurement of excess carriers in silicon wafers.JOURNAL OF APPLIED PHYSICS,114(24). |
| MLA | Ren, Shengdong,et al."Three-dimensional transient model for time-domain free-carrier absorption measurement of excess carriers in silicon wafers".JOURNAL OF APPLIED PHYSICS 114.24(2013). |
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