IOE OpenIR  > 光电技术研究所被WoS收录文章
Three-dimensional transient model for time-domain free-carrier absorption measurement of excess carriers in silicon wafers
Ren, Shengdong1,2; Li, Bincheng1; Huang, Qiuping1,2
Source PublicationJOURNAL OF APPLIED PHYSICS
Volume114Issue:24
2013-12-28
Language英语
Indexed BySCI
WOS IDWOS:000329173200029
SubtypeArticle
AbstractA three-dimensional transient model for time-domain (modulated) free-carrier absorption (FCA) measurement was developed to describe the transport dynamics of photo-generated excess carriers in silicon (Si) wafers. With the developed transient model, numerical simulations were performed to investigate the dependences of the waveforms of the transient FCA signals on the electronic transport parameters of Si wafers and the geometric parameters of the FCA experiment. Experimental waveforms of FCA signals of both n- and p-type Si wafers with resistivity ranging 1-38 Omega.cm were then fitted to the three-dimensional transient model to extract simultaneously and unambiguously the transport parameters of Si wafers, namely, the carrier lifetime, the carrier diffusion coefficient, and the front surface recombination velocity via multi-parameter fitting. A basic agreement between the extracted parameter values and the literature values was obtained. (C) 2013 AIP Publishing LLC.
WOS KeywordSURFACE RECOMBINATION ; BULK LIFETIME ; VELOCITIES ; PRINCIPLE
WOS Research AreaPhysics
WOS SubjectPhysics, Applied
Citation statistics
Document Type期刊论文
Identifierhttp://ir.ioe.ac.cn/handle/181551/1204
Collection光电技术研究所被WoS收录文章
Affiliation1.Chinese Acad Sci, Inst Opt & Elect, Chengdu 610209, Sichuan, Peoples R China
2.Univ Chinese Acad Sci, Beijing 100039, Peoples R China
Recommended Citation
GB/T 7714
Ren, Shengdong,Li, Bincheng,Huang, Qiuping. Three-dimensional transient model for time-domain free-carrier absorption measurement of excess carriers in silicon wafers[J]. JOURNAL OF APPLIED PHYSICS,2013,114(24).
APA Ren, Shengdong,Li, Bincheng,&Huang, Qiuping.(2013).Three-dimensional transient model for time-domain free-carrier absorption measurement of excess carriers in silicon wafers.JOURNAL OF APPLIED PHYSICS,114(24).
MLA Ren, Shengdong,et al."Three-dimensional transient model for time-domain free-carrier absorption measurement of excess carriers in silicon wafers".JOURNAL OF APPLIED PHYSICS 114.24(2013).
Files in This Item:
There are no files associated with this item.
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Ren, Shengdong]'s Articles
[Li, Bincheng]'s Articles
[Huang, Qiuping]'s Articles
Baidu academic
Similar articles in Baidu academic
[Ren, Shengdong]'s Articles
[Li, Bincheng]'s Articles
[Huang, Qiuping]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Ren, Shengdong]'s Articles
[Li, Bincheng]'s Articles
[Huang, Qiuping]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.