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题名:
Superlens imaging lithography for high aspect ratio sub-wavelength pattern employing trilayer resist process
作者: Fang, Liang; Pan, Li; Wang, Changtao; Luo, Xiangang
刊名: MICROELECTRONIC ENGINEERING
出版日期: 2013-10-01
卷号: 110, 页码:35-39
关键词: Super lens ; Surface plasmon ; Lithography ; Tr-layer resist process
文章类型: Article
英文摘要: Recently, superlens imaging lithography below the diffraction limit has been experimentally verified. However, the short exposure depth owing to the near-field attribute of this method restricts its practical application. A tri-layer resist process, which increases the pattern depth through two-step dry etching, can overcome this drawback. In this paper, we investigated the scheme of superlens imaging lithography employing a tri-layer resist process and analysed the effect of the air gap between the object and the photosensitive layer on the exposure depth by finite-difference time-domain analyses. Through optimising the three layer resist thicknesses and dry-etching parameters of the tri-layer resist process, we patterned a high aspect ratio structure with half pitch of 110 nm and depth of 400 nm in our experiment. (C) 2013 Elsevier B.V. All rights reserved.
WOS标题词: Science & Technology ; Technology ; Physical Sciences
类目[WOS]: Engineering, Electrical & Electronic ; Nanoscience & Nanotechnology ; Optics ; Physics, Applied
研究领域[WOS]: Engineering ; Science & Technology - Other Topics ; Optics ; Physics
关键词[WOS]: DIFFRACTION LIMIT ; OPTICAL HYPERLENS ; SILVER SUPERLENS ; BILAYER RESIST ; PERFECT LENS ; REFRACTION ; LAYER
收录类别: SCI
语种: 英语
WOS记录号: WOS:000326003600007
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.ioe.ac.cn/handle/181551/1186
Appears in Collections:光电技术研究所被WoS收录文章_期刊论文

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作者单位: Chinese Acad Sci, Inst Opt & Elect, State Key Lab Opt Technol Microfabricat, Chengdu 610209, Peoples R China

Recommended Citation:
Fang, Liang,Pan, Li,Wang, Changtao,et al. Superlens imaging lithography for high aspect ratio sub-wavelength pattern employing trilayer resist process[J]. MICROELECTRONIC ENGINEERING,2013,110:35-39.
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