中国科学院光电技术研究所机构知识库
Advanced  
IOE OpenIR  > 光电技术研究所被WoS收录文章  > 期刊论文
题名:
Characterization of Silicon Wafers with Combined Photocarrier Radiometry and Free Carrier Absorption
作者: Li, Bincheng1; Huang, Qiuping1,2; Ren, Shengdong1,2
刊名: INTERNATIONAL JOURNAL OF THERMOPHYSICS
出版日期: 2013-09-01
卷号: 34, 期号:8-9, 页码:1735-1745
关键词: Electronic transport properties ; Free carrier absorption ; Ion implantation ; Photocarrier radiometry ; Silicon ; Thermal annealing
文章类型: Article
英文摘要: A combined photocarrier radiometry (PCR) and free carrier absorption (FCA) technique was employed to evaluate the electronic transport properties (carrier lifetime , diffusion coefficient , and the front surface recombination velocity of silicon wafers and to monitor the ion implantation and thermal annealing processes in the semiconductor manufacturing. For non-implanted silicon wafers, the experimental results showed that the accuracy of the simultaneous determination of the transport properties was greatly improved by fitting simultaneously the measured PCR and FCA signals to the theoretical models via a multi-parameter fitting procedure. For As ion implanted and thermal annealed silicon wafers, the results showed that both PCR and FCA amplitudes increased monotonically with the increasing implantation dose ( cm to cm, the decreasing implantation energy (20 keV to 140 keV), and the increasing annealing temperature (500 C to 1000 C), respectively. To explain the dependences of the PCR signals on the implantation and annealing parameters, a multi-wavelength PCR technique was proposed to extract the electronic transport properties of the implanted and annealed wafers. The results showed that ion implantation and thermal annealing caused significant decreases of the minority carrier lifetime and diffusion coefficient of the implantation layer, as well as the recombination velocity at the front surface. All three parameters decreased with the increasing implantation dose.
WOS标题词: Science & Technology ; Physical Sciences ; Technology
类目[WOS]: Thermodynamics ; Chemistry, Physical ; Mechanics ; Physics, Applied
研究领域[WOS]: Thermodynamics ; Chemistry ; Mechanics ; Physics
关键词[WOS]: ROOM-TEMPERATURE ; DEPENDENCE ; LIFETIMES ; ACCURACY ; BULK
收录类别: SCI
语种: 英语
WOS记录号: WOS:000325815500047
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.ioe.ac.cn/handle/181551/1167
Appears in Collections:光电技术研究所被WoS收录文章_期刊论文

Files in This Item:

There are no files associated with this item.


作者单位: 1.Chinese Acad Sci, Inst Opt & Elect, Chengdu 610209, Chengdu, Peoples R China
2.Chinese Acad Sci, Grad Univ, Beijing 100039, Peoples R China

Recommended Citation:
Li, Bincheng,Huang, Qiuping,Ren, Shengdong. Characterization of Silicon Wafers with Combined Photocarrier Radiometry and Free Carrier Absorption[J]. INTERNATIONAL JOURNAL OF THERMOPHYSICS,2013,34(8-9):1735-1745.
Service
Recommend this item
Sava as my favorate item
Show this item's statistics
Export Endnote File
Google Scholar
Similar articles in Google Scholar
[Li, Bincheng]'s Articles
[Huang, Qiuping]'s Articles
[Ren, Shengdong]'s Articles
CSDL cross search
Similar articles in CSDL Cross Search
[Li, Bincheng]‘s Articles
[Huang, Qiuping]‘s Articles
[Ren, Shengdong]‘s Articles
Related Copyright Policies
Null
Social Bookmarking
Add to CiteULike Add to Connotea Add to Del.icio.us Add to Digg Add to Reddit
所有评论 (0)
暂无评论
 
评注功能仅针对注册用户开放,请您登录
您对该条目有什么异议,请填写以下表单,管理员会尽快联系您。
内 容:
Email:  *
单位:
验证码:   刷新
您在IR的使用过程中有什么好的想法或者建议可以反馈给我们。
标 题:
 *
内 容:
Email:  *
验证码:   刷新

Items in IR are protected by copyright, with all rights reserved, unless otherwise indicated.

 

 

Valid XHTML 1.0!
Copyright © 2007-2016  中国科学院光电技术研究所 - Feedback
Powered by CSpace